1/10 turboswitch is a trademark of stmicroelectronics. may 2002 - ed: 5c n ultra-fast, soft recovery. n very low overall power losses in both the diode and the companion transistor. n high frequency and/or high pulsed current operation. n high reverse voltage capability n insulated package : to-220ac ins. electrical insulation : 2500v rms capacitance : 7pf. features and benefits turboswitch 1200v drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. due to their optimized switching performances they also highly decrease power losses in any associated switching igbt or mosfet in all freewheel mode operations. they are particularly suitable in motor control circuitries, or in the primary of smps as snubber, clamping or demagnetizing diodes. they are also suitable for secondary of smps as high voltage rectifier diodes. description i f(av) 8a v rrm 1200v t rr (typ) 50ns v f (max) 2.0v main product characteristics symbol parameter value unit v rrm repetitive peak reverse voltage 1200 v v rsm non repetitive peak reverse voltage 1200 v i f(rms) rms forward current to-220ac/ d 2 pak 30 a to-220ac ins. 20 a i frm repetitive peak forward current tp = 5 m s f = 5khz square 110 a i fsm surge non repetitive forward current tp = 10ms sinusoidal 70 a t stg storage temperature range - 65 to + 150 c t j maximum operating junction temperature 150 c absolute ratings (limiting values) stta812d/di/g ? turboswitch ultra-fast high voltage diode k k a to-220ac stta812d k a to-220ac ins. stta812di nc k a d 2 pak stta812g obsolete product(s) - obsolete product(s)
stta812d/di/g 2/10 symbol parameter test conditions min typ max unit v f* forward voltage drop i f =8a tj = 25c tj = 125c 1.35 2.2 2.0 v v i r** reverse leakage current v r =0.8 x v rrm tj = 25c tj = 125c 0.6 100 4 m a ma vto threshold voltage ip < 3.i av tj = 125c 1.57 v rd dynamic parameter 54 m w test pulses : * tp = 380 m s, d <2% **tp=5ms , d <2% static electrical characteristics symbol parameter conditions value unit r th(j-c) junction to case thermal resistance to-220ac/d 2 pak to-220ac ins. 2.3 3.3 c/w p 1 conduction power dissipation i f(av) =8a d =0.5 to-220ac/d 2 pak to-220ac ins. tc= 105c tc= 85c 19.5 w p max total power dissipation pmax=p1+p3 (p3=10% p1) to-220ac/d 2 pak to-220ac ins. tc= 100c tc= 79c 21.5 w thermal and power data symbol parameter test conditions min typ max unit t rr reverse recovery time tj = 25c i f = 0.5 a i r = 1a irr = 0.25a i f =1a di f /dt =-50a/ m sv r =30v 50 100 ns i rm maximum reverse recovery current tj = 125c vr = 600v i f =8a di f /dt = -64 a/ m s di f /dt = -500 a/ m s 25 12 a s factor softness factor tj = 125c v r = 600v i f =8a di f /dt = -500 a/ m s 1.2 - dynamic electrical characteristics turn-off switching symbol parameter test conditions min typ max unit t fr forward recovery time tj = 25c i f =8 a, di f /dt=64a/ m s measured at 1.1 v f max 900 ns v fp peak forward voltage tj = 25c i f =8a, di f /dt=64a/ m s i f =40a, di f /dt = 500 a/ m s 45 35 v turn-on switching to evaluate the maximum conduction losses use the following equation : p=v to xi f(av) +rdxi f 2 (rms) obsolete product(s) - obsolete product(s)
stta812d/di/g 3/10 0246810 0 2 4 6 8 10 12 14 16 18 20 if(av) (a) p1(w) d = 1 d = 0.5 d = 0.2 d = 0.1 fig. 1: conduction losses versus average current. 0.0 1.0 2.0 3.0 4.0 5.0 0.1 1.0 10.0 100.0 vfm(v) ifm(a) tj=125c fig. 2: forward voltage drop versus forward cur- rent (maximum values). 1e-4 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) single pulse d = 0.1 d = 0.2 d = 0.5 fig. 3: relative variation of thermal impedance junction to case versus pulse duration. 0 100 200 300 400 500 0 50 100 150 200 250 300 350 400 450 500 550 dif/dt(a/s) trr(ns) vr=600v tj=125c if=2*if(av) if=0.5*if(av) if=if(av) fig. 5: reverse recovery time versus di f /dt (90% confidence). 0 100 200 300 400 500 0.80 1.00 1.20 1.40 s factor vr=600v if<2*if(av) tj=125c dif/dt(a/s) fig. 6: softness factor (tb/ta) versus di f /dt (typical values). 0 100 200 300 400 500 0 10 20 30 40 50 dif/dt(a/s) irm(a) vr=600v tj=125c if=2*if(av) if=if(av) if=0.5*if(av) fig. 4: peak reverse recovery current versus di f /dt (90% confidence). obsolete product(s) - obsolete product(s)
stta812d/di/g 4/10 25 50 75 100 125 0.7 0.8 0.9 1.0 1.1 tj(c) irm s factor fig. 7: relative variation of dynamic parameters versus junction temperature (reference tj=125c). 0 100 200 300 400 500 0 10 20 30 40 50 60 70 vfp(v) if=if(av) tj=125c dif/dt(a/s) fig.8: transient peak forward voltage versus di f /dt (90% confidence). 0 100 200 300 400 500 100 200 300 400 500 600 tfr(ns) vfr=1.1*vf max. if=if(av) tj=125c dif/dt(a/s) fig. 9: forward recovery time versus di f /dt (90% confidence). obsolete product(s) - obsolete product(s)
stta812d/di/g 5/10 fig. a: freewheel mode. total losses due to the diode p = p1+ p2+ p3+ p4+ p5 watts switching losses in the diode switching losses in the tansistor due to the diode conduction losses in the diode reverse losses in the diode the 1200v turboswitch series has been designed to provide the lowest overall power losses in all high frequency or high pulsed current operations. in such applications (fig a to d),the way of calculating the power losses is given below : application data diode: turboswitch il load transistor switching t t f=1/t =t/t v r obsolete product(s) - obsolete product(s)
stta812d/di/g 6/10 i i f rd i r v r v to v f v fig. e: static characteristics conduction losses : p1=v t0 .i f(av) +r d .i f 2 (rms) reverse losses : p2=v r .i r .(1- d ) t t f = 1/t = t/t pwm fig. b: snubber diode. fig. c: demagnetizing diode. fig. d: rectifier diode. static & dynamic characteristics . power losses . obsolete product(s) - obsolete product(s)
stta812d/di/g 7/10 turn-on losses : (in the transistor, due to the diode) p5 = vi sf xdi dt r rm f + 2 32 6 () + + vi i s f xdi dt rrml f () 2 2 turn-off losses (in the diode) : p3 = vi sf xdi dt r rm f 2 6 turn-off losses : (with non negligible serial inductance) p3 = vi sf xdi dt r rm f + 2 6 li f rm 2 2 p3,p3 and p5 are suitable for power mosfet and igbt fig. f: turn-off characteristics i f v f v fp 1.1v f v f f di /dt 0 0t t i fmax tfr fig. g: turn-on characteristics turn-on losses : p4 = 0.4 (v fp -v f ).i fmax .t fr .f application data (contd) di f /dt = v r /l di /dt r tb ta i rm v r i v t s=tb/ta trr = ta + tb rectifier operation v i il t transistor di /dt f di /dt r tb ta i rm vr diode i v t trr = ta + tb s = tb / ta obsolete product(s) - obsolete product(s)
stta812d/di/g 8/10 package data to-220ac ins. ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 4.80 5.40 0.189 0.212 f 6.20 6.60 0.244 0.259 i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 m 2.60 0.102 m b l4 c b2 a2 l2 c2 b1 a1 a f l i e c1 n cooling method: by conduction (c) n recommended torque value: 0.8 m.n n maximum torque value: 1.0 m.n obsolete product(s) - obsolete product(s)
stta812d/di/g 9/10 package data d 2 pak ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.23 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.40 0.393 0.409 g 4.88 5.28 0.192 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 m 2.40 3.20 0.094 0.126 r 0.40 typ. 0.016 typ. v2 0 8 0 8 a c2 d r a2 m v2 c a1 g l l3 l2 b b2 e * * flat zone no less than 2mm 8.90 3.70 1.30 5.08 16.90 10.30 footprint dimensions (in millimeters) obsolete product(s) - obsolete product(s)
stta812d/di/g 10/10 package data to-220ac (jedec outline) ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 h2 10.00 10.40 0.393 0.409 l2 16.40 typ. 0.645 typ. l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. i 3.75 3.85 0.147 0.151 a c d e m l7 h2 ? i l5 l6 l9 l4 g f1 f l2 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com ordering type marking package weight base qty delivery mode stta812d stta812d to-220ac 1.86g 50 tube stta812di stta812di to-220ac ins. 1.86g 250 bulk stta812g stta812g d 2 pak 1.48g 50 tube STTA812G-TR stta812g d 2 pak 1.48g 500 tape & reel n epoxy meets ul94,v0 n cooling method: by conduction (c) n recommended torque value: 0.55 m.n n maximum torque value: 0.7 m.n obsolete product(s) - obsolete product(s)
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